Ruijiang Hong Shuhua Xu
材料科学技术（英）
Al-doped zinc oxide (ZnO:Al, AZO) films were deposited on glass substrates using a reactive mid-frequency (MF) magnetron sputtering process with rotating cathodes. The influence of deposition parameters on structural, electrical and optical properties of AZO fims is investigated. It is observed that the rotating magnetron targets exhibited a sputtered metallic surface over a wider range, and there is no re-deposition zone between the racetracks. The films deposited at static deposition mode demonstrate more homogenous in thickness and resistivity across the target surface compared with conventional rectangular targets. The films deposited under the proper conditions show a regular cone-shaped grain surface and densely packed columnar structure. The minimum resistivity of 3.16×10-4 Ω·m was obtained for the film prepared at substrate temperature of 150°C, gas pressure of 640 MPa and oxygen partial pressure of 34 MPa.
关键词:
Al-doped zinc oxide
,
MF magnetron sputtering
,
Properties
材料科学技术（英）
The relationship of "preparation parameters-microstructures-wettability" of TiO2 films was reported. In this work, TiO2 films were deposited onto glass and silicon substrates by using mid-frequency dual magnetron sputtering technique at ambient temperature with various power densities and deposition time. After deposition, the films were heat treated at different annealing temperatures. X-ray diffraction (XRD), Raman spectroscopy, and field-emission scanning electron microscopy (FE-SEM) were utilized to characterize TiO2 films. The wettability of the films was evaluated by water contact angle measurement. The phase transition temperature of TiO2 films depended on the power density. It was demonstrated that wettability was strongly structure dependent and the film with the thickness of 610 nm (the power density was 2.22 W/cm(2)) showed the lowest contact angle (8). It can be concluded that smaller crystallite size, the rutile phase with (110) face being parallel to the surface, and tensile stress favored the hydrophilicity of the TiO2 films.
关键词:
titanium dioxide;reactive magnetron sputtering;phase composition;microstructure;hydrophilicity;thin-films;titanium-dioxide;photoinduced hydrophilicity;surfaces;anatase;conversion;photocatalysis;enhancement;electrode;stress
Environmental Chemistry Letters
Nanocrystalline TiO(2) films were prepared by magnetron sputtering technique on stainless-steel substrates. The as-deposited TiO(2) thin films were in anatase structure with smooth surface morphology. Decomposition of methyl orange was used to measure the photoelectrocatalytic activity. The degradation rate of methyl orange increased with externally applied potential. To further accelerate the photocatalytic reaction, a novel method was employed by applying an external electric field in the mid-frequency domain. The fastest photocatalytic degradation rate of methyl orange was obtained when the frequency was maintained at 20 kHz with an external anodic bias at 3.0 V.
关键词:
TiO(2);Thin films;Photocatalysts;Electric field;electrochemically assisted photocatalysis;degradation;tio2;dye;4-chlorophenol;films
Jianrong Xiao
材料科学技术（英）
Copper nitride (Cu3N) films were prepared by reactive radio frequency magnetron sputtering at various nitrogen partial pressures, and the films were annealed at different temperatures. The crystal structure of the films was identified by X-ray diffraction technique. The Cu3N films have a cubic anti-ReO3 structure, and lattice constant is 0.3855 nm. With increasing nitrogen partial pressure, the Cu3N films are strongly textured with the crystal direction [100]. The atomic force microscope images show that the films presence a smooth and compact morphology with nanocrystallites of about 70 nm in size. The films were further characterized by UV-visible spectrometer, and the optical band gap of the films was calculated from the Tauc equation. The typical value of optical band gap of the films is about 1.75 eV, and it increases with increasing nitrogen partial pressure. The thermal property of the films was measured by thermogravimetry, and the decomposition temperature of the films was about 530 K.
关键词:
Cu3N films
Jianrong Xiao
材料科学技术（英）
Copper nitride (Cu3N) films were prepared by reactive radio frequency magnetron sputtering at various nitrogen partial pressures, and the films were annealed at different temperatures. The crystal structure of the films was identified by X-ray diffraction technique. The Cu3N films have a cubic anti-ReO3 structure, and lattice constant is 0.3855 nm. With increasing nitrogen partial pressure, the Cu3N films are strongly textured with the crystal direction [100]. The atomic force microscope images show that the films presence a smooth and compact morphology with nanocrystallites of about 70 nm in size. The films were further characterized by UV-visible spectrometer, and the optical band gap of the films was calculated from the Tauc equation. The typical value of optical band gap of the films is about 1.75 eV, and it increases with increasing nitrogen partial pressure. The thermal property of the films was measured by thermogravimetry, and the decomposition temperature of the films was about 530 K.
关键词:
Cu3N films
Science China-Technological Sciences
The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure, optical and electrical properties was studied. Through optimizing the process parameters, an optimal preparation parameter can be obtained. Using the optimal parameters to prepare the ZAO thin films, the resistivity of the ZAO film is as low as 4.5x10(-4) Omega.cm and the average transmissivity in the visible region is around 80%, the optical and electrical properties meet the application requirements.
关键词:
ZAO film;resistivity;transmissivity;zno;temperature
Materials Letters
Highly preferred (002) orientation transparent conductive Al-doped ZnO (ZAO) films were successfully prepared by de magnetron reactive sputtering from a Zn target mixed with Al of 2.0 wt.%. The film has a resistivity of 4.80 X 10(-4) n cm and a visible transmittance of as high as 90%. XPS analysis indicates Al-enrichment on the film surface. The asymmetry of Al 2p(3/2) XPS peak is resolved into two components: one centering at 72.14 eV attributed to metallic Al and the other having a binding energy of 74.17 eV due to oxidized Al. (C) 2001 Elsevier Science B.V. All rights reserved.
关键词:
Al-doped;ZnO;XPS;Al-enrichment;oxide thin-films;optical-properties;electrical-properties;rf;dc;transparent;deposition
